1) Ukuminyana okuphansi.
2) Ukumelana nokugqwala.
I-3) Ukumelana nokugqoka.
4) Ukumelana ne-oxidation.
5) Ukumelana nemihuzuko.
I-6) Ukumelana nokushaqeka okuhle kokushisa (ngenxa ye-coefficient ephansi yokwandisa okushisayo kanye ne-conductivity ephezulu yokushisa).
I-7) Amandla amahle kakhulu ekushiseni okuphezulu.
8) Ukulawulwa okuhle kwe-dimensional kobumo obuyinkimbinkimbi.
Gqoka Imikhiqizo Engazweli: Ipuleti le-Silicon carbide, isitini se-Silicon carbide, i-Pipe lining, i-Pipe Cone, isishingishane, njll.
Ifenisha ye-Kiln: I-Plate, i-Beam, i-Roller, i-Burner Nozzle, i-Round beam, i-square beam, i-hole beam.I-Crucible, i-Sagger, njll.
Ezinye: Imibhobho ye-Desulfurization
Ukusetshenziswa kwe-Reaction Bonded Silicon Carbide:
I-Reaction bonded silicon carbide ifakazele ukuthi iyikhethelo elihle kakhulu lezinto ezisetshenziswayo zokugqoka njengamalayini wamapayipi, Imilomo, ukuklinywa kokulawula ukugeleza kanye nezingxenye zokuguga ezinkulu ezimayini kanye nezinye izimboni.
Izakhiwo | Amayunithi | I-SiSiC/RBSIC |
Ukuminyana kwenqwaba (SiC) | V01% | ≥85 |
Ukuminyana ngobuningi | g/cm3 | 3.01 |
I-porosity ebonakalayo | % | <0.1 |
I-modulus yokuqhekeka ku-20 ℃ | Mpa | 250 |
I-modulus yokuqhekeka ku-1200 ℃ | Mpa | 280 |
I-modulus ye-elasticity ku-20 ℃ | I-Gpa | 330 |
Ukuqina kokuphuka | Mpa*m1/2 | 3.3 |
I-Thermal Conductivity ku-1200 ℃ | wm-1.k-1 | 45 |
Ukunwetshwa kwe-thermal ku-1200 ℃ | a×10-6/℃ | 4.5 |
Ukumelana nokushaqeka okushisayo ku-1200 ℃ | Kuhle kakhulu | |
I-coefficient yemisebe yokushisa | <0.9 | |
Izinga lokushisa eliphezulu | ℃ | 1350 |
kungenziwa egcizelele ngokuvumelana nezidingo zamakhasimende.
Samukela ama-oda angokwezifiso.
Uma ufuna ukwazi ulwazi olwengeziwe lomkhiqizo, wamukelekile ukuthintana nathi futhi sizokukhokhela umkhiqizo ofaneleka kakhulu kanye nenkonzo engcono kakhulu!